Thursday, August 19, 2010

New 10 terms

MOL
middle of the line

STI
shallow trench isolation

ILD
interlevel dielectric

UTSOI
ultrathin silicon-on-insulator

ETSOI
extremely thin silicon-on-insulator

LSOI
local silicon-on-insulator

RMG
replacement metal gate

MuGFET
multigate field effect transistor

LPCVD
low-pressure chemical vapor deposition

WID
within-die

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